Infineon BSC042N03MS: High-Performance MOSFET for Power Management Applications

Release date:2025-11-10 Number of clicks:54

Infineon BSC042N03MS: High-Performance MOSFET for Power Management Applications

The relentless drive for greater efficiency and power density in modern electronic systems places immense demands on power management components. At the heart of many advanced solutions lies the MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor), a critical device for switching and regulating power. The Infineon BSC042N03MS stands out as a premier example, engineered to deliver exceptional performance in a compact form factor for a wide array of demanding applications.

This MOSFET is constructed using Infineon's advanced OptiMOS™ technology, a platform renowned for its ultra-low on-state resistance (R DS(on)) and superior switching characteristics. The BSC042N03MS, in particular, boasts a maximum R DS(on) of just 3.7 mΩ at 10 V, which is a key figure of merit. This incredibly low resistance directly translates to minimized conduction losses, allowing for higher efficiency operation and reducing the need for extensive thermal management. This makes it especially valuable in space-constrained designs where heat sinking is limited.

Furthermore, the device offers a low gate charge (Q G ) and low intrinsic capacitances. These parameters are crucial for achieving high-frequency switching capability. Operating efficiently at higher frequencies enables designers to shrink the size of associated passive components like inductors and capacitors, leading to more compact and lighter end products. This combination of low R DS(on) and fast switching speed strikes an optimal balance, reducing both switching and conduction losses across a wide operating range.

The BSC042N03MS is housed in a robust and space-efficient SuperSO8 package. This package not only minimizes the footprint on the printed circuit board (PCB) but also provides superior thermal performance, effectively transferring heat away from the silicon die to maintain reliability under high-stress conditions.

Typical applications that benefit from its high performance include:

DC-DC Converters in computing, telecom, and server power supplies.

Synchronous Rectification, where its low R DS(on) is critical for maximizing efficiency.

Motor Control circuits in industrial automation and consumer appliances.

Load Switching systems in automotive and battery management applications.

ICGOODFIND: The Infineon BSC042N03MS is a top-tier MOSFET that exemplifies the progress in power semiconductor technology. Its industry-leading low R DS(on) and excellent switching performance make it an ideal choice for designers seeking to push the boundaries of efficiency, power density, and thermal management in their power management systems.

Keywords: Power MOSFET, Low RDS(on), High-Efficiency, OptiMOS™, Synchronous Rectification

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