Infineon IPB017N10N5: 100V OptiMOS 5 Power MOSFET for High-Efficiency Power Conversion
The relentless pursuit of higher efficiency and power density in modern electronic systems demands power semiconductors that deliver exceptional performance. The Infineon IPB017N10N5, a 100V OptiMOS 5 Power MOSFET, stands out as a premier solution engineered to meet these rigorous challenges. This device is specifically designed to minimize power losses and maximize thermal performance in a wide array of applications, from server and telecom power supplies to industrial motor drives and high-performance computing.
At the heart of its superior performance is the advanced OptiMOS 5 technology. This technology platform represents a significant leap forward, offering an optimized figure-of-merit (FoM) that balances low on-state resistance (R DS(on)) and low gate charge (Q G). The IPB017N10N5 boasts an extremely low typical R DS(on) of just 1.7 mΩ at 10 V, which is a key contributor to reducing conduction losses. This allows for more current to be handled with minimal voltage drop, directly enhancing overall system efficiency and reducing the need for complex cooling mechanisms.
Furthermore, the device features outstanding switching characteristics. The low gate charge ensures rapid turn-on and turn-off times, which drastically cuts switching losses. This is particularly critical in high-frequency switch-mode power supplies (SMPS), where every switching event contributes to total energy dissipation. By operating efficiently at higher frequencies, designers can leverage smaller passive components like inductors and capacitors, leading to a substantial increase in power density and a reduction in the overall system footprint and cost.
The benefits extend beyond raw electrical performance. The IPB017N10N5 is housed in an Infineon’s proprietary SuperSO8 package, which offers a vastly improved thermal footprint compared to standard SO-8 packages. Its superior package design enhances power dissipation capabilities, allowing the MOSFET to operate reliably under high-stress conditions. This robust construction ensures long-term reliability and stability, which is paramount for mission-critical applications.
In application, this MOSFET is a cornerstone for building high-efficiency synchronous rectification stages in DC-DC converters and OR-ing solutions in redundant power architectures. Its ability to perform with minimal losses makes it an ideal choice for designing energy-conscious systems that comply with stringent international energy efficiency standards.
ICGOOODFIND: The Infineon IPB017N10N5 Power MOSFET is a top-tier component that sets a high bar for performance in power conversion. Its exceptional combination of ultra-low R DS(on), fast switching speed, and superior thermal performance empowers engineers to create more efficient, compact, and reliable power solutions for the next generation of electronic equipment.
Keywords: Power Efficiency, OptiMOS 5 Technology, Low RDS(on), SuperSO8 Package, Synchronous Rectification.
