Infineon IPP60R160C6XKSA1: A Benchmark in High-Efficiency Power Conversion

The relentless pursuit of higher efficiency and power density in modern electronics places immense demands on power switching components. Addressing this challenge head-on, the Infineon IPP60R160C6XKSA1 stands out as a premier 600V, 16A CoolMOS™ Power Transistor engineered for superior performance in demanding applications.

Built on Infineon's advanced superjunction (SJ) technology, this MOSFET sets a new standard for low conduction and switching losses. The key to its performance lies in its exceptionally low typical on-state resistance (R DS(on)) of just 160 mΩ. This directly translates to reduced power loss during operation, leading to cooler running systems and significantly higher overall efficiency. Such characteristics are critical for applications like switched-mode power supplies (SMPS), where every percentage point of efficiency gain is valuable.

Furthermore, the IPP60R160C6XKSA1 is designed for robustness and reliability. It features a very low gate charge (Q G) and exceptional switching dynamics, enabling high-frequency operation. This allows designers to reduce the size of magnetic components and heat sinks, pushing the boundaries of power density. The transistor is also characterized by its high avalanche ruggedness, ensuring dependable operation even under harsh conditions and voltage spikes.

Common applications highlighting its capabilities include:

Power Factor Correction (PFC) stages in server and telecom power supplies.

High-frequency inverters for industrial motor drives.

Solar inverters and other renewable energy systems.

LED lighting drivers requiring high efficiency.

ICGOOODFIND: The Infineon IPP60R160C6XKSA1 is a top-tier CoolMOS™ transistor that masterfully balances ultra-low losses, high switching speed, and robust performance. It is an optimal choice for designers aiming to maximize efficiency and power density in their 600V power conversion systems.

Keywords: CoolMOS, High Efficiency, Low RDS(on), Superjunction Technology, Power Density