Infineon IPP65R150CFD: A High-Performance 650V CoolMOS™ CFD2 Power Transistor

The relentless pursuit of higher efficiency, power density, and reliability in power electronics drives continuous innovation in semiconductor technology. At the forefront of this evolution is Infineon's IPP65R150CFD, a 650V CoolMOS™ CFD2 power transistor engineered to set new benchmarks in performance for a wide range of applications, including server and telecom SMPS, industrial drives, solar inverters, and EV charging infrastructure.

Built upon Infineon’s revolutionary superjunction (SJ) technology, the IPP65R150CFD is designed to minimize switching and conduction losses. Its standout feature is an exceptionally low typical on-state resistance (R DS(on)) of just 150mΩ, which directly translates to reduced conduction losses and higher overall system efficiency. This allows designers to either achieve more power from a similar form factor or create more compact designs without sacrificing thermal performance.

A key differentiator of the CFD2 series is the integrated fast body diode. This feature is critical for hard-switching topologies like power factor correction (PFC) and half-bridge circuits. The diode offers exceptional reverse recovery characteristics (Q rr, I rm), significantly reducing switching losses and electromagnetic interference (EMI). This leads to cooler operation, increased switching frequency capabilities, and a reduction in the need for external snubber circuits, simplifying design and lowering bill-of-material costs.

Furthermore, the transistor provides superior switching performance and high dv/dt capability, enabling robust operation in demanding environments. The combination of low gate charge (Q G) and low output capacitance (C oss) ensures swift turn-on and turn-off transitions, further enhancing efficiency. The device also boasts excellent avalanche ruggedness, offering an additional safety margin against voltage spikes and unpredictable transients, which is vital for maintaining system reliability in real-world conditions.

The IPP65R150CFD is offered in the popular TO-220 FullPAK package. This fully molded package provides enhanced creepage and clearance distances, improving reliability in high-altitude or humid environments and simplifying the task of meeting stringent safety standards.

ICGOOODFIND: The Infineon IPP65R150CFD CoolMOS™ CFD2 is a premier 650V power MOSFET that masterfully balances ultra-low conduction losses, superior switching performance, and robust intrinsic body diode characteristics. It is an optimal choice for engineers aiming to push the boundaries of efficiency and power density in next-generation power conversion systems.

Keywords: Superjunction Technology, Low R DS(on), Fast Body Diode, High Efficiency, Avalanche Ruggedness